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VELOCIDAD DE LECTURA 530 MB/S VELOCIDAD DE ESCRITURA 470 MB/S FORMATO 2280 TIPO DE CHIP TIPO CHIP NAND FLASH TLC DIMENSIONES DEL PRODUCTO 2
dual 32-bit subchannels for increased efficiency and an on-module power management integrated circuit (PMIC) to provide juice where it's needed most
Características Supports layer 3 switching for enhanced performance and usability
HPE uses the highest quality materials for its DDR4 server memory
Aplicación/Uso Redes Ópticas Redes de datos Interfaces/Puertos
ARUBA CENTRAL DM 1 TOKEN 3Y radeon™ pro VELOCIDAD DE LECTURA 530 MB/SARUBA CENTRAL DM 1 TOKEN 3Y Consideraciones Tipo de Producto : Producto Final Tipo Operatividad : (NV) Nuevo Foto referencial CDIGO DE FABRICANTE: JY926AAE
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